Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy
Identifieur interne : 000756 ( Main/Exploration ); précédent : 000755; suivant : 000757Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy
Auteurs : RBID : ISTEX:339_1983_Article_BF00624719.pdfEnglish descriptors
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Abstract
We report the results of Hall effect and deep-level-transient-spectroscopy measurements onn-type indium selenide samples cleaved from non-intentionally doped material and from chlorine, tin, gallium sulphide or oxygen doped ingots. Some unidentified shallow and deep levels are found. Impurity levels attributed to Cl (310 meV) and to Sn (44 and 120 meV) are also reported. Anomalous degeneracy of electrons at low temperature is discussed.
DOI: 10.1007/BF00624719
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Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000, Stuttgart 80</wicri:regionArea><wicri:noRegion>Stuttgart 80</wicri:noRegion><wicri:noRegion>Stuttgart 80</wicri:noRegion></affiliation></author><author><name>A. Chevy</name><affiliation wicri:level="3"><mods:affiliation>Laboratoire de Physique des Milieux très Condensés, 4 Place Jussieu, Tour 13, 4eme étage, F-75005, Paris, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Milieux très Condensés, 4 Place Jussieu, Tour 13, 4eme étage, F-75005, Paris</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1983_Article_BF00624719.pdf</idno><date when="1983">1983</date><idno type="doi">10.1007/BF00624719</idno><idno type="wicri:Area/Main/Corpus">000973</idno><idno type="wicri:Area/Main/Curation">000973</idno><idno type="wicri:Area/Main/Exploration">000756</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>71.55</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">We report the results of Hall effect and deep-level-transient-spectroscopy measurements onn-type indium selenide samples cleaved from non-intentionally doped material and from chlorine, tin, gallium sulphide or oxygen doped ingots. Some unidentified shallow and deep levels are found. Impurity levels attributed to Cl (310 meV) and to Sn (44 and 120 meV) are also reported. Anomalous degeneracy of electrons at low temperature is discussed.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="aa8f5f1a0eb353c0d3692032e156748d5bb05504"><titleInfo lang="eng"><title>Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy</title></titleInfo><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Segura</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Electricidad y Magnetismo, Facultad de Ciencias Físicas, Burjasot (Valencia), Spain</affiliation></name><name type="personal"><namePart type="given">K.</namePart><namePart type="family">Wünstel</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000, Stuttgart 80, Fed. Rep. Germany</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Chevy</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Laboratoire de Physique des Milieux très Condensés, 4 Place Jussieu, Tour 13, 4eme étage, F-75005, Paris, France</affiliation></name><typeOfResource>text</typeOfResource><genre>Contributed Papers</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1983-03-29</dateCreated><dateCaptured encoding="w3cdtf">1983-04-11</dateCaptured><dateValid encoding="w3cdtf">2004-10-27</dateValid><copyrightDate encoding="w3cdtf">1983</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">We report the results of Hall effect and deep-level-transient-spectroscopy measurements onn-type indium selenide samples cleaved from non-intentionally doped material and from chlorine, tin, gallium sulphide or oxygen doped ingots. Some unidentified shallow and deep levels are found. Impurity levels attributed to Cl (310 meV) and to Sn (44 and 120 meV) are also reported. Anomalous degeneracy of electrons at low temperature is discussed.</abstract><subject lang="eng"><genre>PACS</genre><topic>71.55</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1983</partNumber><partNumber>Volume: 31</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1983-07-01</dateIssued><copyrightDate encoding="w3cdtf">1983</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 8</identifier><recordInfo><recordOrigin>Springer-Verlag, 1983</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00624719</identifier><identifier type="matrixNumber">Art2</identifier><identifier type="local">BF00624719</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>139</start><end>145</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1983</recordOrigin><recordIdentifier>339_1983_Article_BF00624719.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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